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Infineon IMW65R039M1HXKSA1
| Manufacturer | |
| MPN | IMW65R039M1HXKSA1 |
| LCSC Part # | C3278949 |
| Packaging | TO-247-3-41 |
| Customer # | |
| Key Attributes | 650 V CoolSiC M1 SiC Trench Power Device |
| Datasheet |  Infineon IMW65R039M1HXKSA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 50mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.393nF | |
| Gate Charge(Qg) | 41nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 50mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.393nF | |
| Gate Charge(Qg) | 41nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Features
AI Translation
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qrr
- Superior gate oxide reliability
- Tj,max = 175℃ and excellent thermal behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers (recommended driving voltage: 18V)
Applications
AI Translation
- SMPS
- UPS (uninterruptable power supplies)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formation
- Class D amplifiers
In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 11.9332 | $ 11.93 |
| 10+ | $ 10.2624 | $ 102.62 |
| 30+ | $ 9.244 | $ 277.32 |
| 90+ | $ 8.3915 | $ 755.24 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 50mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.393nF | |
| Gate Charge(Qg) | 41nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 50mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.393nF | |
| Gate Charge(Qg) | 41nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Features
AI Translation
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qrr
- Superior gate oxide reliability
- Tj,max = 175℃ and excellent thermal behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers (recommended driving voltage: 18V)
Applications
AI Translation
- SMPS
- UPS (uninterruptable power supplies)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formation
- Class D amplifiers
C3278949 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IMW65R030M1HXKSA1 | Infineon | TO-247-3-41 | 3 | $ 17.0146 | ||
| IMW65R033M2HXKSA1 | Infineon | TO-247-3 | 2 | $ 10.2286 | ||
| NCES090P050T | NCE | TO-247-3L | 450 | $ 2.4293 | ||
| NCES075P042T | NCE | TO-247-3L | 310 | $ 2.4293 | ||
| NTHL060N065SC1 | onsemi | TO-247-3LD | 1 | $ 8.532 | ||
| IMW120R045M1 | Infineon | TO-247-3 | 20 | $ 13.8618 | ||
| IMW120R040M1HXKSA1 | Infineon | TO-247-3 | 30 | $ 13.9754 | ||
| C3M0045065D | Wolfspeed | TO-247-3 | 35 | $ 14.4835 | ||
| IMW65R015M2HXKSA1 | Infineon | TO-247-3 | 10 | $ 20.3767 | ||
| IMW65R027M1HXKSA1 | Infineon | TO-247-3 | 0 | $ 16.3793 |