Infineon IPP50R280CEXKSA1
| Manufacturer | |
| MPN | IPP50R280CEXKSA1 |
| LCSC Part # | C3278830 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 500V 18.1A TO-220-3 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 18.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| RDS(on) | 280mΩ@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 773pF | |
| Gate Charge(Qg) | 32.6nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 18.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| RDS(on) | 280mΩ@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 773pF | |
| Gate Charge(Qg) | 32.6nC@10V |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Features
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Applications
- PFC stages
- Hard switching PWM stages
- Resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV and Lighting
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8618 | $ 0.86 |
| 10+ | $ 0.8402 | $ 8.40 |
| 50+ | $ 0.8262 | $ 41.31 |
| 100+ | $ 0.8123 | $ 81.23 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 18.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| RDS(on) | 280mΩ@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 773pF | |
| Gate Charge(Qg) | 32.6nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 18.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 119W | |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF | |
| RDS(on) | 280mΩ@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 773pF | |
| Gate Charge(Qg) | 32.6nC@10V |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Features
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Applications
- PFC stages
- Hard switching PWM stages
- Resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV and Lighting
C3278830 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



