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Infineon IPN70R750P7SATMA1RoHS

Manufacturer
Infineon
MPN
IPN70R750P7SATMA1
LCSC Part #
C3278580
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 700V 6.5A SOT-223
Datasheetpdf iconInfineon IPN70R750P7SATMA1
In-Stock: 229
229 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.2201$ 1.22
10+$ 1.0447$ 10.45
30+$ 0.957$ 28.71
100+$ 0.8708$ 87.08
500+$ 0.8189$ 409.45
1,000+$ 0.7912$ 791.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOT-223
Operating Temperature-40℃~+150℃
Drain to Source Voltage700V
Output Capacitance(Coss)5.1pF
Current - Continuous Drain(Id)6.5A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6.7W
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)306pF
Gate Charge(Qg)8.3nC@10V
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Introduction

AI Translation

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform tailored for cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series offers all the advantages of fast-switching SJ MOSFETs, combined with an excellent price-to-performance ratio and an advanced level of ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve very slim designs.

Features

AI Translation
  • Extremely low losses due to ultra-low FOM ((RDS(on) * Qg) and (RDS(on) * Eoss))
  • Excellent thermal performance
  • Integrated ESD protection diode
  • Low switching losses ((E\text oss ))
  • JEDEC-qualified

Applications

AI Translation
  • Recommended for flyback topologies, e.g., chargers, adapters, lighting applications, etc.