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ST STB33N60DM6
| Manufacturer | |
| MPN | STB33N60DM6 |
| LCSC Part # | C3277533 |
| Packaging | D2PAK(TO-263) |
| Customer # | |
| Key Attributes | N-channel, Current:25A, Voltage:600V |
| Datasheet |  ST STB33N60DM6 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 128mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 128mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared to the previous generation of MDmesh products, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significantly reduced on-resistance per unit area (RDS(on)), and delivers one of the most effective switching performances on the market for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.
Features
AI Translation
- Fast recovery body diode
- Lower RDS(on) per unit area compared to previous generation
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.9115 | $ 3.91 |
| 200+ | $ 1.5137 | $ 302.74 |
| 500+ | $ 1.4612 | $ 730.60 |
| 1,000+ | $ 1.435 | $ 1435.00 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 128mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 115pF | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 128mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared to the previous generation of MDmesh products, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significantly reduced on-resistance per unit area (RDS(on)), and delivers one of the most effective switching performances on the market for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.
Features
AI Translation
- Fast recovery body diode
- Lower RDS(on) per unit area compared to previous generation
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
AI Translation
- Switching applications
C3277533 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STB42N65M5 | ST | D2PAK | 1 | $ 17.1854 | ||
| STB33N60M2 | ST | D2PAK | 10 | $ 9.8729 | ||
| STB34NM60ND | ST | TO-263 | 945 | $ 3.2542 | ||
| STB33N60M6 | ST | D2PAK(TO-263) | 0 | $ 3.606 | ||
| SIHB125N60EF-GE3 | VISHAY | D2PAK | 0 | $ 3.7704 | ||
| SIHB120N60E-T1-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 6.9459 | ||
| SIHB120N60E-T5-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 6.9459 | ||
| STB36N60M6 | ST | TO-263 | 0 | $ 7.1094 | ||
| SIHB105N60EF-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 2.6366 | ||
| STB38N65M5 | ST | D2PAK | 0 | $ 10.8395 |