LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
onsemi FDB42AN15A0 product image
Images for reference only

onsemi FDB42AN15A0

Manufacturer
onsemi
MPN
FDB42AN15A0
LCSC Part #
C3277522
Packaging
D2PAK(TO-263)
Customer #
Key Attributes
N-Channel, Current: 35A, Voltage: 150V
Datasheetpdf icononsemi FDB42AN15A0
RoHS Compliance3 documents available
Not available now
Minimum: 1Multiple: 1Sales Unit: Piece

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingD2PAK(TO-263)
Operating Temperature-55℃~+175℃
Drain to Source Voltage150V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)35A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.15nF
Gate Charge(Qg)39nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

International Rectifier's 5th Generation HEXFET utilizes advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The D²Pak is a surface-mount power package capable of accommodating die sizes up to HEX-4. It offers the highest power handling capability and the lowest possible on-resistance of any existing surface-mount package. Due to its low internal connection resistance, the D²Pak is suitable for high-current applications and can dissipate up to 2.0W of power in typical SMT applications. The through-hole version (IRLZ24NL) is suitable for low-profile applications.

Features

AI Translation
  • On-resistance r DS(ON) = 36 mΩ (typ), gate-source voltage VGS = 10 V, drain current ID = 12 A
  • Total gate charge Qg(tot) = 33 nC (typ), gate-source voltage VGS = 10 V
  • Low Miller charge
  • Low reverse recovery charge body diode
  • Unclamped inductive switching capability (single pulse and repetitive pulse)

Applications

AI Translation
  • DC-DC converters and offline UPS
  • Distributed power architectures and voltage regulator modules
  • Primary switching in 24V and 48V systems
  • High-voltage synchronous rectifiers
  • Direct injection/diesel injection systems
  • Electronic valve train systems