Images for reference only
EDA ModelsEasyEDA
onsemi MMDF1300R2
| Manufacturer | |
| MPN | MMDF1300R2 |
| LCSC Part # | C3275835 |
| Packaging | - |
| Customer # | |
| Key Attributes | Dual Channel MOSFET, Current: 3A, Voltage: 25V |
| Datasheet |  onsemi MMDF1300R2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -65℃~+150℃ | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 210mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Input Capacitance(Ciss) | 301pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -65℃~+150℃ | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 2A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 210mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Input Capacitance(Ciss) | 301pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These miniature SMT MOSFETs feature ultra-low on-resistance (RDS(on)) and true logic-level performance. They can withstand high energy in avalanche and commutation modes, and the drain-source diode offers an extremely short reverse recovery time. MiniMOS devices are designed for low-voltage, high-speed switching applications where power efficiency is critical.
Features
AI Translation
- Low on-resistance (RDS(on)) for improved efficiency and extended battery life
- Logic-level gate drive, compatible with logic IC control
- Compact SO-8 surface-mount package for board space savings
- Diode with high-speed soft-recovery characteristics
Applications
AI Translation
- DC-DC converter
- Power management for portable and battery-powered products (e.g., computers, printers, mobile phones, and cordless phones)
- Low-voltage motor control in mass storage products (e.g., disk drives and tape drives)
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1656 | $ 0.17 |
| 200+ | $ 0.0641 | $ 12.82 |
| 500+ | $ 0.0619 | $ 30.95 |
| 1,000+ | $ 0.0608 | $ 60.80 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -65℃~+150℃ | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 210mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Input Capacitance(Ciss) | 301pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -65℃~+150℃ | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 2A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 210mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Input Capacitance(Ciss) | 301pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These miniature SMT MOSFETs feature ultra-low on-resistance (RDS(on)) and true logic-level performance. They can withstand high energy in avalanche and commutation modes, and the drain-source diode offers an extremely short reverse recovery time. MiniMOS devices are designed for low-voltage, high-speed switching applications where power efficiency is critical.
Features
AI Translation
- Low on-resistance (RDS(on)) for improved efficiency and extended battery life
- Logic-level gate drive, compatible with logic IC control
- Compact SO-8 surface-mount package for board space savings
- Diode with high-speed soft-recovery characteristics
Applications
AI Translation
- DC-DC converter
- Power management for portable and battery-powered products (e.g., computers, printers, mobile phones, and cordless phones)
- Low-voltage motor control in mass storage products (e.g., disk drives and tape drives)
C3275835 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |