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Rochester Electronics TN28F010-120RoHS

Manufacturer
MPN
TN28F010-120
LCSC Part #
C3230463
Packaging
-
Customer #
Key Attributes
Microcontrollers RoHS
Datasheetpdf iconRochester Electronics TN28F010-120
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1+$ 63.1462$ 63.15
200+$ 24.4376$ 4887.52
500+$ 23.5782$ 11789.10
1,000+$ 23.1539$ 23153.90
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Products Specifications

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Introduction

AI Translation

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. It adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten in a test socket, in a PROM-programmer socket, onboard during subassembly test, in-system during final test, and in-system after-sale. The 28F010 increases memory flexibility, while contributing to time and cost savings. It employs advanced CMOS circuitry for systems requiring high-performance access speeds, low power consumption, and immunity to noise. Its 65 nanosecond access time provides no-WAIT-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100μA translates into power savings when the device is deselected. With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.

Features

AI Translation
  • Flash Electrical Chip-Erase -- 1 Second Typical
  • Chip-Erase Quick Pulse Programming Algorithm - 10μs Typical
  • Byte-Program - 2 Second Chip-Program
  • 100,000 Erase/Program Cycles
  • 12.0V±5% VpP
  • High-Performance Read - 65 ns Maximum Access Time
  • CMos Low Power Consumption - 10 mA Typical Active Current
  • -50μA Typical Standby Current
  • 0 Watts Data Retention Power
  • Integrated Program/Erase Stop Timel
  • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
  • Noise Immunity Features - ± 10% Vcc Tolerance
  • Maximum Latch-Up immunity through EPl Processing
  • ETOXTM Nonvolatile Flash Technology
  • EPROM-Compatible Process Base
  • High-Volume Manufacturing Experience
  • JEDEC-Standard Pinouts
  • 32-Pin Plastic Dip
  • 32-Lead PLCC
  • 32-Lead TSOP
  • Extended Temperature Options

Applications

AI Translation
  • Alternative to disk, EEPROM, and battery-backed static RAM
  • Replacement for EPROM where periodic updates of code and data-tables are required
  • Primary applications and operating systems storage in flash to enhance performance and reduce power consumption in portable equipment
  • Diskless workstations and terminals to minimize network traffic and achieve instant-on
  • Embedded systems as a solid state alternative to dynamic RAM/disk
  • Eliminate the need for battery backup in systems using high-density static RAM/battery configuration for data accumulation