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NXP BLF574XR112 product image
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NXP BLF574XR112

Manufacturer
NXP
MPN
BLF574XR112
LCSC Part #
C3195740
Packaging
-
Customer #
Key Attributes
Single Bipolar Transistors
Datasheetpdf iconNXP BLF574XR112
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QtyUnit Price(Reference Only)Total Amount
1+$ 508.0729$ 508.07
200+$ 196.6179$ 39323.58
500+$ 189.7084$ 94854.20
1,000+$ 186.2938$ 186293.80
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNXP
Packaging-
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Introduction

AI Translation

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Features

AI Translation
  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

AI Translation
  • Industrial, scientific and medical applications
  • Broadcast transmitter applications