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Modelli EDAEasyEDA
TI HGTP10N50E1
| Produttore | |
| Cod. Prod. | HGTP10N50E1 |
| Cod. LCSC | C3193433 |
| Imballo | TO-220-3 |
| Numero Cliente | |
| Attr. chiave | 60W 10A 500V TO-220-3 Single IGBTs |
| Scheda Tecnica |  TI HGTP10N50E1 |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Td(off) | 400ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 10A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 680uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 19nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Td(off) | 400ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 10A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 680uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 19nC |
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Descrizione
Traduzione AI
HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1, and HGTP10N50E1 are n-channel enhancement-mode IGBTs designed for high-voltage, low-conduction-loss applications such as switching regulators and motor drives. These devices can be driven directly by low-power ICs.
Caratteristiche
Traduzione AI
- 10A and 12A, 400V and 500V
- V<sub>CE(ON)</sub>: 2.5V max
- T<sub>p</sub>: 1μs, 0.5(1s
- Low on-state voltage
- Fast switching speed
- High input impedance
- No anti-parallel diode
Applicazioni
Traduzione AI
- Power Supply
- Motor Driver
- Protection Circuit
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 4.5758 | $ 4.58 |
| 200+ | $ 1.7708 | $ 354.16 |
| 500+ | $ 1.709 | $ 854.50 |
| 1,000+ | $ 1.6781 | $ 1678.10 |
Package Standard50/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Td(off) | 400ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 10A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 680uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 19nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | TI | |
| Imballo | TO-220-3 | |
| Td(off) | 400ns | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 50ns | |
| Current - Collector(Ic) | 10A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 680uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 19nC |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1, and HGTP10N50E1 are n-channel enhancement-mode IGBTs designed for high-voltage, low-conduction-loss applications such as switching regulators and motor drives. These devices can be driven directly by low-power ICs.
Caratteristiche
Traduzione AI
- 10A and 12A, 400V and 500V
- V<sub>CE(ON)</sub>: 2.5V max
- T<sub>p</sub>: 1μs, 0.5(1s
- Low on-state voltage
- Fast switching speed
- High input impedance
- No anti-parallel diode
Applicazioni
Traduzione AI
- Power Supply
- Motor Driver
- Protection Circuit
C3193433 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| STGP7NC60HD | ST | TO-220 | 13 | $ 1.6402 | ||
| STGP14NC60KD | ST | TO-220 | 18 | $ 4.0485 | ||
| JNG15T65PS1 | JIAENSEMI | TO-220 | 2 | $ 0.7458 | ||
| JNG20T65PS1 | JIAENSEMI | TO-220 | 35 | $ 0.8936 | ||
| IXYP20N65C3D1 | Littelfuse/IXYS | TO-220-3 | 16 | $ 3.5808 | ||
| STGP3NC120HD | ST | TO-220 | 10 | $ 3.7074 | ||
| FGP20N60UFDTU | onsemi | TO-220 | 593 | $ 1.529 | ||
| IXYP15N65C3D1 | Littelfuse/IXYS | TO-220-3 | 0 | $ 3.9777 | ||
| STGP19NC60HD | ST | TO-220 | 0 | $ 6.3312 | ||
| IXGP20N120A3 | Littelfuse | TO-220-3 | 0 | $ 1.3982 |