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Infineon IKW15N120H3FKSA1
| Manufacturer | |
| MPN | IKW15N120H3FKSA1 |
| LCSC Part # | C3191702 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | IGBT 1.2kV 30A TO-247-3 |
| Datasheet |  Infineon IKW15N120H3FKSA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 260ns | |
| Pd - Power Dissipation | 217W | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 45pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,15A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 260ns | |
| Switching Energy(Eoff) | 1.55mJ | |
| Turn-On Energy (Eon) | 1.55mJ | |
| Input Capacitance(Cies) | 875pF | |
| Output Capacitance(Coes) | 75pF | |
| Gate Charge(Qg) | 75nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 260ns | |
| Pd - Power Dissipation | 217W | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 45pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,15A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 260ns | |
| Switching Energy(Eoff) | 1.55mJ | |
| Turn-On Energy (Eon) | 1.55mJ | |
| Input Capacitance(Cies) | 875pF | |
| Output Capacitance(Coes) | 75pF | |
| Gate Charge(Qg) | 75nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- V_CE = 1200 V
- I_C = 15 A
- Ultra-low V_CE,sat
- Low EMI
- Very soft, fast-recovery anti-parallel diode
- Maximum junction temperature T_vjmax = 175°C
- JEDEC certified for target applications
- Lead-free plating; RoHS compliant
Applications
AI Translation
- Uninterruptible power supply
- Welding converter
- High switching frequency converter
In-Stock: 4
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.9428 | $ 6.94 |
Standard Packaging30/Full Tube | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 260ns | |
| Pd - Power Dissipation | 217W | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 45pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,15A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 260ns | |
| Switching Energy(Eoff) | 1.55mJ | |
| Turn-On Energy (Eon) | 1.55mJ | |
| Input Capacitance(Cies) | 875pF | |
| Output Capacitance(Coes) | 75pF | |
| Gate Charge(Qg) | 75nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 260ns | |
| Pd - Power Dissipation | 217W | |
| Td(on) | 21ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 45pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,15A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 260ns | |
| Switching Energy(Eoff) | 1.55mJ | |
| Turn-On Energy (Eon) | 1.55mJ | |
| Input Capacitance(Cies) | 875pF | |
| Output Capacitance(Coes) | 75pF | |
| Gate Charge(Qg) | 75nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- V_CE = 1200 V
- I_C = 15 A
- Ultra-low V_CE,sat
- Low EMI
- Very soft, fast-recovery anti-parallel diode
- Maximum junction temperature T_vjmax = 175°C
- JEDEC certified for target applications
- Lead-free plating; RoHS compliant
Applications
AI Translation
- Uninterruptible power supply
- Welding converter
- High switching frequency converter
C3191702 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SPT15N120T1 | SPTECH | TO-247-3 | 30 | $1.6742 $1.7623 | ||
| NCE25TD120BT | NCE | TO-247 | 447 | $ 2.4334 | ||
| IRG7PH46UD-EP-HXY | HXY MOSFET | TO-247 | 43 | $ 3.0795 | ||
| DGTD120T40S1PT-HXY | HXY MOSFET | TO-247 | 13 | $ 4.2142 | ||
| IKW40N120CH7XKSA1-HXY | HXY MOSFET | TO-247 | 4 | $ 5.4041 | ||
| STGWA15S120DF3 | ST | TO-247-3 | 0 | $ 7.003 | ||
| STGWA15M120DF3 | ST | TO-247 | 0 | $ 6.9209 | ||
| SL15T120FL1 | Slkor | TO-247 | 0 | $ 1 | ||
| NGTB15N120IHRWG | onsemi | TO-247-3 | 0 | $ 1.5991 | ||
| MIW25N120FA-BP | MCC | TO-247AB | 0 | $ 2.2432 |