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Infineon FP35R12W2T7BPSA1 product image
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Infineon FP35R12W2T7BPSA1RoHS

Manufacturer
Infineon
MPN
FP35R12W2T7BPSA1
LCSC Part #
C3190226
Packaging
-
Customer #
Key Attributes
20mW 35A 1.2kV FS (Field Stop) IGBT Modules RoHS
Datasheetpdf iconInfineon FP35R12W2T7BPSA1
In-Stock: 30
30 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 26.5003$ 26.50
30+$ 25.2314$ 756.94
Standard Packaging15/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Td(off)260ns;320ns;340ns;250ns;310ns;330ns
Pd - Power Dissipation20mW
Td(on)37ns;43ns;44ns;35ns;41ns
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)23pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)548nC@600V
Vce Saturation(VCE(sat))1.6V;1.74V;1.82V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)2.39mJ;3.73mJ;4.56mJ;2.41mJ;3.74mJ;4.58mJ
Turn-On Energy (Eon)2.62mJ;3.73mJ;4.45mJ;2.53mJ;3.47mJ;4.21mJ
Operating Temperature-40℃~+175℃@(Tj)
Input Capacitance(Cies)6.62nF@25V
Output Capacitance(Coes)-
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Features

AI Translation
  • Low V​CEsat
  • TRENCHSTOP IGBT7 technology
  • Overload operating temperature up to 175°C
  • 2.5kV AC 1-minute isolation withstand voltage
  • Low thermal resistance Al₂O₃ substrate
  • High power density
  • Compact design
  • Solder connection technology

Applications

AI Translation
  • Auxiliary inverter
  • Air conditioning
  • Motor drive