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Leiditech SQ2303ES product image
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Leiditech SQ2303ESRoHS

Manufacturer
LeiditechAsian Brands
MPN
SQ2303ES
LCSC Part #
C3040109
Packaging
SOT-23
Customer #
Key Attributes
MOSFET 30V 5A SOT-23
Datasheetpdf iconLeiditech SQ2303ES
In-Stock: 2,875
2,875 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1045$ 0.0920$ 0.46
50+$ 0.0826$ 0.0727$ 3.64
150+$ 0.0716$ 0.0631$ 9.47
500+$ 0.0634$ 0.0558$ 27.90
3,000+$ 0.0569$ 0.0501$ 150.30
6,000+$ 0.0536$ 0.0472$ 283.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerLeiditech
PackagingSOT-23
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)90mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)640pF
Gate Charge(Qg)14nC@10V
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Introduction

AI Translation

The SQ2303ES utilizes advanced trench technology, featuring excellent on-resistance RDS(ON), low gate charge, and the ability to operate at gate voltages as low as 2.5V. This device is suitable for load switch or PWM applications.

Features

AI Translation
  • Drain-Source Voltage V DS -30V
  • Drain Current I D (at V GS = -10V) -5.0A
  • On-Resistance R DS(ON) (at V GS = -10V) 50mΩ (max)
  • On-Resistance R DS(ON) (at V GS = -4.5V) 65mΩ (max)
  • On-Resistance R DS(ON) (at V GS = -2.5V) 90mΩ (max)
  • SOT23 package

Applications

AI Translation
  • DC/DC converter
  • N-channel MOSFET