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ST STP35N60DM2 product image
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ST STP35N60DM2RoHS

Manufacturer
ST
MPN
STP35N60DM2
LCSC Part #
C3002265
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 28A TO-220
Datasheetpdf iconST STP35N60DM2
In-Stock: 43
43 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.8152$ 3.82
10+$ 3.254$ 32.54
50+$ 2.7933$ 139.67
100+$ 2.4559$ 245.59
500+$ 2.3002$ 1150.10
1,000+$ 2.2304$ 2230.40
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)28A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation210W
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
Gate Charge(Qg)54nC@10V
TypeN-Channel
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Introduction

AI Translation

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications