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NATLINEAR NP2016DR-N-G product image
  • NP2016DR-N-G thumbnail 1
  • NP2016DR-N-G thumbnail 2
  • NP2016DR-N-G thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
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NATLINEAR NP2016DR-N-GRoHS

Manufacturer
NATLINEARAsian Brands
MPN
NP2016DR-N-G
LCSC Part #
C2991144
Packaging
DFN-6L-B(2x2)
Customer #
Key Attributes
MOSFET N-CH 20V 16A DFN-6L-B(2x2)
Datasheetpdf iconNATLINEAR NP2016DR-N-G
In-Stock: 9,065
9,065 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0853$ 0.43
50+$ 0.0674$ 3.37
150+$ 0.0584$ 8.76
500+$ 0.0517$ 25.85
2,500+$ 0.0441$ 110.25
4,000+$ 0.0414$ 165.60
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNATLINEAR
PackagingDFN-6L-B(2x2)
Drain to Source Voltage20V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation18W
RDS(on)14mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)100pF
Number1 N-channel
Input Capacitance(Ciss)900pF
Gate Charge(Qg)12nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The NP2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Features

AI Translation
  • VDS = 20V，VD = 16A
  • RDS(ON)(Typ.) = 11.5mΩ @ VGS = 2.5V
  • RDS(ON)(Typ.) = 9mΩ @ VGS = 4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Applications

AI Translation
  • PWM applications
  • Load switch