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ST STGW30V60DF
| Manufacturer | |
| MPN | STGW30V60DF |
| LCSC Part # | C2970852 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | IGBT 600V 60A TO-247 |
| Datasheet |  ST STGW30V60DF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 189ns | |
| Pd - Power Dissipation | 258W | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 77pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 233uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.75nF | |
| Output Capacitance(Coes) | 120pF | |
| Gate Charge(Qg) | 163nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 189ns | |
| Pd - Power Dissipation | 258W | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 77pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 233uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.75nF | |
| Output Capacitance(Coes) | 120pF | |
| Gate Charge(Qg) | 163nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: TJ = 175 ℃
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ΔlC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
AI Translation
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.068 | $ 6.07 |
| 10+ | $ 5.3028 | $ 53.03 |
| 30+ | $ 4.8496 | $ 145.49 |
| 100+ | $ 4.3898 | $ 438.98 |
| 500+ | $ 4.1786 | $ 2089.30 |
| 1,000+ | $ 4.0827 | $ 4082.70 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 189ns | |
| Pd - Power Dissipation | 258W | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 77pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 233uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.75nF | |
| Output Capacitance(Coes) | 120pF | |
| Gate Charge(Qg) | 163nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 189ns | |
| Pd - Power Dissipation | 258W | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 77pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 233uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.75nF | |
| Output Capacitance(Coes) | 120pF | |
| Gate Charge(Qg) | 163nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: TJ = 175 ℃
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ΔlC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
AI Translation
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
C2970852 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STGW30V60F | ST | TO-247 | 28 | $ 8.349 | ||
| STGW30H60DFB | ST | TO-247 | 6 | $ 2.8429 | ||
| CRG40T60AK3SD | CRMICRO | TO-247 | 849 | $ 2.0211 | ||
| SPT50N65F1A | SPTECH | TO-247-3 | 25 | $2.3466 $2.4701 | ||
| SPT60N65F1A1 | SPTECH | TO-247-3 | 28 | $2.7084 $2.8509 | ||
| SPT50N65F1A1 | SPTECH | TO-247-3 | 85 | $2.0611 $2.1695 | ||
| IKW50N65H5 | SPTECH | TO-247-3 | 20 | $2.0611 $2.1695 | ||
| IKW50N60H3 | SPTECH | TO-247-3 | 0 | $2.5498 $2.6839 | ||
| STGWA30HP65FB | ST | TO-247-3 | 0 | $ 5.9081 | ||
| NGTB30N120FL2WG-VB | VBsemi Elec | TO-247 | 0 | $ 9.0935 |