- Pinout
- Footprint
ST PD57030-E
| Manufacturer | |
| MPN | PD57030-E |
| LCSC Part # | C2970694 |
| Packaging | PowerSO-10 |
| Customer # | |
| Key Attributes | MOSFET N-CH 65V 4A PowerSO-10 |
| Datasheet |  ST PD57030-E |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10 | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 4A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 57pF | |
| Output Capacitance(Coss) | 30pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10 | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 4A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 57pF | |
| Output Capacitance(Coss) | 30pF |
Introduction
This device is a common-source N-channel enhancement-mode lateral-effect RF power transistor designed for high-gain, wideband commercial and industrial applications. It operates in common-source mode at 28 V up to 1 GHz. Manufactured using ST's latest LDMOS technology and housed in the industry's first true SMD plastic RF power package — PowerSO-10RF — the device delivers excellent gain, linearity, and reliability. Its outstanding linearity performance makes it an ideal choice for base station applications. The PowerSO-10 plastic package is designed for high reliability, and is ST's first JEDEC-qualified high-power SMD package specially optimized for RF requirements, offering excellent RF performance and ease of assembly.
Features
- Excellent thermal stability
- Common-source configuration
- Output power P<sub>OUT</sub> = 30 W, gain 14 dB at 945 MHz / 28 V
- New RF plastic package
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 108.5168 | $ 108.52 |
| 10+ | $ 106.4762 | $ 1064.76 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10 | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 4A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 57pF | |
| Output Capacitance(Coss) | 30pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10 | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 4A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 57pF | |
| Output Capacitance(Coss) | 30pF |
Introduction
This device is a common-source N-channel enhancement-mode lateral-effect RF power transistor designed for high-gain, wideband commercial and industrial applications. It operates in common-source mode at 28 V up to 1 GHz. Manufactured using ST's latest LDMOS technology and housed in the industry's first true SMD plastic RF power package — PowerSO-10RF — the device delivers excellent gain, linearity, and reliability. Its outstanding linearity performance makes it an ideal choice for base station applications. The PowerSO-10 plastic package is designed for high reliability, and is ST's first JEDEC-qualified high-power SMD package specially optimized for RF requirements, offering excellent RF performance and ease of assembly.
Features
- Excellent thermal stability
- Common-source configuration
- Output power P<sub>OUT</sub> = 30 W, gain 14 dB at 945 MHz / 28 V
- New RF plastic package
Applications
- Switching applications
C2970694 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |