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EDA ModelsEasyEDA
ST STF8N65M5
| Manufacturer | |
| MPN | STF8N65M5 |
| LCSC Part # | C2970375 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 650V 7A 5V 25W 600mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet |  ST STF8N65M5 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 690pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 690pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
These devices are N-channel power MOSFETs based on the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products feature extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Ultra-low R<sub>DS(ON)</sub>
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.8468 | $ 1.85 |
| 200+ | $ 0.7152 | $ 143.04 |
| 500+ | $ 0.6898 | $ 344.90 |
| 1,000+ | $ 0.6771 | $ 677.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 690pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 690pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are N-channel power MOSFETs based on the innovative MDmesh M5 vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products feature extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Ultra-low R<sub>DS(ON)</sub>
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C2970375 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 11N65RT | HL | TO-220 | 965 | $ 0.594 | ||
| SVF18N65F | Hangzhou Silan Microelectronics | TO-220 | 100 | $ 0.9057 | ||
| SIHF074N65E-GE3 | VISHAY | TO-220 | 10 | $ 10.6706 | ||
| STF25N80K5 | ST | TO-220-3 | 3 | $ 9.3091 | ||
| STP6N95K5 | ST | TO-220 | 211 | $ 2.0422 | ||
| STF12N65M2 | ST | TO-220-3 | 0 | $ 6.0014 | ||
| STP12N65M5 | ST | TO-220 | 0 | $ 2.0306 | ||
| STP10LN80K5 | ST | TO-220 | 0 | $ 5.0201 | ||
| STP11N65M5 | ST | TO-220 | 0 | $ 1.6214 | ||
| STFU13N80K5 | ST | TO-220-3 | 0 | $ 1.0094 |