Infineon/CYPRESS S29GL256S10DHI020
| 제조업체 | |
| 제조사 품번 | S29GL256S10DHI020 |
| LCSC 번호 | C2959255 |
| 포장 | LBGA-64 |
| 고객 번호 | |
| 주요 제원 | 256Mbit 2.7V~3.6V Parallel LBGA-64 Memory RoHS |
| 데이터시트 |  Infineon/CYPRESS S29GL256S10DHI020 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon/CYPRESS | |
| 포장 | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 60ns | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon/CYPRESS | |
| 포장 | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 60ns | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
개요
The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
주요 특징
- 65 nm MirrorBit Eclipse Technology
- Single supply (vcc) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
- x16 data bus
- Asynchronous 32-byte Page read
- 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Sector Erase – Uniform 128-kbyte sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP) – Volatile and non
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.5513 | $ 0.55 |
| 260+ | $ 0.2141 | $ 55.67 |
| 520+ | $ 0.2064 | $ 107.33 |
| 1,040+ | $ 0.2033 | $ 211.43 |
표준 패키지260/Full Tray | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon/CYPRESS | |
| 포장 | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 60ns | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon/CYPRESS | |
| 포장 | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 60ns | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
개요
The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
주요 특징
- 65 nm MirrorBit Eclipse Technology
- Single supply (vcc) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
- x16 data bus
- Asynchronous 32-byte Page read
- 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Sector Erase – Uniform 128-kbyte sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP) – Volatile and non
C2959255 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |