Nexperia PUSB3FR6Z
| Manufacturer | |
| MPN | PUSB3FR6Z |
| LCSC Part # | C295447 |
| Packaging | XSON-7(1.2x2.2) |
| Customer # | |
| Key Attributes | ESD DIODE 3.3VWM 3VC -3VC XSON-7(1.2x2.2) |
| Datasheet | |
| Alternative Parts | 1 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Nexperia | |
| Packaging | XSON-7(1.2x2.2) | |
| Clamping Voltage | 3V | |
| Operating Temperature | -40℃~+85℃ | |
| Peak Pulse Current (Ipp) | 7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | - | |
| Number of Channels | 6 | |
| Voltage - Breakdown | 6V | |
| type | ESD | |
| Polarity | - | |
| Reverse Leakage Current (Ir) | 1nA | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Nexperia | |
| Packaging | XSON-7(1.2x2.2) | |
| Clamping Voltage | 3V | |
| Operating Temperature | -40℃~+85℃ | |
| Peak Pulse Current (Ipp) | 7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | - |
| Type | Description | |
|---|---|---|
| Number of Channels | 6 | |
| Voltage - Breakdown | 6V | |
| type | ESD | |
| Polarity | - | |
| Reverse Leakage Current (Ir) | 1nA | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Introduction
The device is designed to protect high-speed interfaces such as SuperSpeed and Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against ElectroStatic Discharge (ESD). The device includes six high-level ESD protection diode structures for ultra high-speed signal lines. The device is encapsulated in a leadless ultra small DFN2111-7 (SOT1358-1) Surface-Mounted Device (SMD) plastic package. All signal lines are protected by a special diode structure offering ultra low line capacitance of only 0.35 pF. These diodes utilize a snap-back structure in order to provide protection to downstream components from ESD voltages up to ±15 kV contact exceeding IEC 61000-4-2, level 4.
Features
- System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces
- Supports SuperSpeed USB 3.2 at 10 Gbps
- All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4
- Matched 0.5 mm trace spacing
- Line capacitance of only 0.35 pF for each channel
- Design-friendly ‘pass-through’ signal routing
Applications
- Portable and wearable devices
- Smartphones and tablet PCs
- TVs and monitors
- DVD recorders and players
- Notebooks, main board graphic cards and ports
- Set-top boxes and game consoles
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4143 | $ 0.41 |
| 10+ | $ 0.3217 | $ 3.22 |
| 30+ | $ 0.2811 | $ 8.43 |
| 100+ | $ 0.2324 | $ 23.24 |
| 500+ | $ 0.2096 | $ 104.80 |
| 1,000+ | $ 0.1966 | $ 196.60 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Nexperia | |
| Packaging | XSON-7(1.2x2.2) | |
| Clamping Voltage | 3V | |
| Operating Temperature | -40℃~+85℃ | |
| Peak Pulse Current (Ipp) | 7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | - | |
| Number of Channels | 6 | |
| Voltage - Breakdown | 6V | |
| type | ESD | |
| Polarity | - | |
| Reverse Leakage Current (Ir) | 1nA | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Nexperia | |
| Packaging | XSON-7(1.2x2.2) | |
| Clamping Voltage | 3V | |
| Operating Temperature | -40℃~+85℃ | |
| Peak Pulse Current (Ipp) | 7A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | - |
| Type | Description | |
|---|---|---|
| Number of Channels | 6 | |
| Voltage - Breakdown | 6V | |
| type | ESD | |
| Polarity | - | |
| Reverse Leakage Current (Ir) | 1nA | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Introduction
The device is designed to protect high-speed interfaces such as SuperSpeed and Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against ElectroStatic Discharge (ESD). The device includes six high-level ESD protection diode structures for ultra high-speed signal lines. The device is encapsulated in a leadless ultra small DFN2111-7 (SOT1358-1) Surface-Mounted Device (SMD) plastic package. All signal lines are protected by a special diode structure offering ultra low line capacitance of only 0.35 pF. These diodes utilize a snap-back structure in order to provide protection to downstream components from ESD voltages up to ±15 kV contact exceeding IEC 61000-4-2, level 4.
Features
- System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces
- Supports SuperSpeed USB 3.2 at 10 Gbps
- All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4
- Matched 0.5 mm trace spacing
- Line capacitance of only 0.35 pF for each channel
- Design-friendly ‘pass-through’ signal routing
Applications
- Portable and wearable devices
- Smartphones and tablet PCs
- TVs and monitors
- DVD recorders and players
- Notebooks, main board graphic cards and ports
- Set-top boxes and game consoles
C295447 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TPESD3324P | TECH PUBLIC | DFN2510-10 | 1,790 | $ 0.0922 |



