Infineon/CYPRESS CY62128EV30LL-45SXI
| Manufacturer | |
| MPN | CY62128EV30LL-45SXI |
| LCSC Part # | C2953883 |
| Packaging | SOIC-32 |
| Customer # | |
| Key Attributes | 1-Mbit (128K × 8) Static RAM |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V | |
| Access Time | 45ns | |
| Current - Supply | 11mA | |
| Interface | Parallel | |
| Standby Supply Current | 4uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit |
| Type | Description | |
|---|---|---|
| Voltage - Supply | 2.2V~3.6V | |
| Access Time | 45ns | |
| Current - Supply | 11mA | |
| Interface | Parallel | |
| Standby Supply Current | 4uA |
Introduction
The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW).
Features
- Very high speed: 45 ns
- Temperature ranges:
- Industrial: -40 ℃ to +85 ℃
- Wide voltage range: 2.2 V to 3.6 V
- Pin compatible with CY62128DV30
- Ultra low standby power
- Typical standby current: 1 μA
- Maximum standby current: 4 μA
- Ultra low active power
- Typical active current: 1.3 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Offered in Pb-free 32-pin small outline integrated circuit (SOIC), 32-pin thin small outline package (TSOP) Type I, and 32-pin shrunk thin small outline package (STSOP) packages
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5184 | $ 3.52 |
| 10+ | $ 3.0106 | $ 30.11 |
| 25+ | $ 2.7087 | $ 67.72 |
| 100+ | $ 2.4038 | $ 240.38 |
| 500+ | $ 2.2638 | $ 1131.90 |
| 1,000+ | $ 2.201 | $ 2201.00 |
Standard Packaging25/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit | |
| Voltage - Supply | 2.2V~3.6V | |
| Access Time | 45ns | |
| Current - Supply | 11mA | |
| Interface | Parallel | |
| Standby Supply Current | 4uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | SOIC-32 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto power-down function | |
| Memory Size | 1Mbit |
| Type | Description | |
|---|---|---|
| Voltage - Supply | 2.2V~3.6V | |
| Access Time | 45ns | |
| Current - Supply | 11mA | |
| Interface | Parallel | |
| Standby Supply Current | 4uA |
Introduction
The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW).
Features
- Very high speed: 45 ns
- Temperature ranges:
- Industrial: -40 ℃ to +85 ℃
- Wide voltage range: 2.2 V to 3.6 V
- Pin compatible with CY62128DV30
- Ultra low standby power
- Typical standby current: 1 μA
- Maximum standby current: 4 μA
- Ultra low active power
- Typical active current: 1.3 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Offered in Pb-free 32-pin small outline integrated circuit (SOIC), 32-pin thin small outline package (TSOP) Type I, and 32-pin shrunk thin small outline package (STSOP) packages
C2953883 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991b2a |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991b2a |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



