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Infineon/CYPRESS CY15B064J-SXET product image
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Infineon/CYPRESS CY15B064J-SXETRoHS

Manufacturer
Infineon/CYPRESS
MPN
CY15B064J-SXET
LCSC Part #
C2953071
Packaging
SOIC-8
Customer #
Key Attributes
64-Kbit Serial (I²C) Automotive F-RAM
Datasheetpdf iconInfineon/CYPRESS CY15B064J-SXET
In-Stock: 3
3 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 4.6338$ 4.63
10+$ 3.9871$ 39.87
30+$ 3.6018$ 108.05
100+$ 3.212$ 321.20
500+$ 3.0325$ 1516.25
1,000+$ 2.952$ 2952.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingSOIC-8
Operating Temperature-40℃~+125℃
Features-
Memory Size64Kbit
Voltage - Supply3V~3.6V
Program / Erase Cycles10,000,000,000,000 Cycles
Clock Frequency1MHz
Data Retention - TDR (Year)121 Years
Current - Supply200uA
Standby Supply Current6uA
InterfaceI2C
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Introduction

AI Translation

The CY15B064J is a 64- Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory of F- RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system- level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the CY15B064J performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F- RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The CY15B064J is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15B064J ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The CY15B064J provides substantial benefits to users of serial (I^2 C) EEPROM as a hardware drop- in replacement. The device specifications are guaranteed over an automotive- e temperature range of - 40°C to +125°C.

Features

AI Translation
  • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
  • High-endurance 10 trillion (10^15) read/writes
  • 121-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Fast two-wire Serial interface (I^2 C)
  • Up to 1-MHz frequency
  • Direct hardware replacement for serial (I^2 C) EEPROM
  • Supports legacy timings for 100 kHz and 400 kHz
  • Low power consumption
  • 120 μA (typ) active current at 100 kHz
  • 6 μA (typ) standby current
  • Voltage operation: V_DD = 3.0 V to 3.6 V
  • Automotive-E temperature: - 40°C to +125°C
  • 8-pin small outline integrated circuit (SOIC) package
  • AEC Q100 Grade 1 compliant
  • Restriction of hazardous substances (RoHS) compliant