Infineon/CYPRESS S29GL256S90FHI020
| Manufacturer | |
| MPN | S29GL256S90FHI020 |
| LCSC Part # | C2949791 |
| Packaging | LBGA-64 |
| Customer # | |
| Key Attributes | 256Mbit 2.7V~3.6V Parallel LBGA-64 Memory RoHS |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
Introduction
The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Features
- CMOS 3.0 V core with versatile I/O
- 65 nm MIRRORBIT™ Eclipse technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- Versatile I/O feature
- Wide I/O voltage range (VIO): 1.65 V to VCC
- x16 data bus
- Asynchronous 32-byte page read
- 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction
- Sector erase
- Uniform 128-kbyte sectors
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- Advanced sector protection (ASP) - Volatile and non-volatile protection methods for each sector
- Separate 1024-byte one time program (OTP) array with two lockable regions
- Common flash interface (CFI) parameter table
- Temperature range / grade - Industrial (-40℃ to +85℃) - Industrial plus (-40℃ to +105℃) - Automotive, AEC-Q100 grade 3 (-40℃ to +85℃) - Automotive, AEC-Q100 grade 2 (-40℃ to +105℃)
- 100,000 program / erase cycles
- 20 years data retention
- Packaging options
- 56-pin TSOP
- 64-ball LAA Fortified BGA, 13 mm x 11 mm
- 64-ball LAE Fortified BGA, 9 mm x 9 mm
- 56-ball VBU Fortified BGA, 9 mm x 7 mm
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.8227 | $ 12.82 |
| 10+ | $ 12.3981 | $ 123.98 |
Standard Packaging1800/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon/CYPRESS | |
| Packaging | LBGA-64 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
Introduction
The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Features
- CMOS 3.0 V core with versatile I/O
- 65 nm MIRRORBIT™ Eclipse technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- Versatile I/O feature
- Wide I/O voltage range (VIO): 1.65 V to VCC
- x16 data bus
- Asynchronous 32-byte page read
- 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction
- Sector erase
- Uniform 128-kbyte sectors
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- Advanced sector protection (ASP) - Volatile and non-volatile protection methods for each sector
- Separate 1024-byte one time program (OTP) array with two lockable regions
- Common flash interface (CFI) parameter table
- Temperature range / grade - Industrial (-40℃ to +85℃) - Industrial plus (-40℃ to +105℃) - Automotive, AEC-Q100 grade 3 (-40℃ to +85℃) - Automotive, AEC-Q100 grade 2 (-40℃ to +105℃)
- 100,000 program / erase cycles
- 20 years data retention
- Packaging options
- 56-pin TSOP
- 64-ball LAA Fortified BGA, 13 mm x 11 mm
- 64-ball LAE Fortified BGA, 9 mm x 9 mm
- 56-ball VBU Fortified BGA, 9 mm x 7 mm
C2949791 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991b1a |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991b1a |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



