Infineon/CYPRESS S29GL256S10DHV020
| Fabricante | |
| N.º de pieza fab. | S29GL256S10DHV020 |
| Nº LCSC | C2948810 |
| Emb. | LBGA-64 |
| Número de Cliente | |
| Atrib. clave | 256Mbit 2.7V~3.6V Parallel LBGA-64 Memory RoHS |
| Hoja de Datos |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon/CYPRESS | |
| Emb. | LBGA-64 | |
| Operating Temperature | - | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 100ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon/CYPRESS | |
| Emb. | LBGA-64 | |
| Operating Temperature | - | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 100ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
Descripción
The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Características
- 65 nm MirrorBit Eclipse Technology
- Single supply (vcc) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
- x16 data bus
- Asynchronous 32-byte Page read
- 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Sector Erase – Uniform 128-kbyte sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP) – Volatile and no
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.6324 | $ 0.63 |
| 260+ | $ 0.2449 | $ 63.67 |
| 520+ | $ 0.2368 | $ 123.14 |
| 1,040+ | $ 0.2319 | $ 241.18 |
Encapsulado Estándar260/Full Tray | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon/CYPRESS | |
| Emb. | LBGA-64 | |
| Operating Temperature | - | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 100ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon/CYPRESS | |
| Emb. | LBGA-64 | |
| Operating Temperature | - | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 100ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 100uA | |
| Interface | Parallel |
Descripción
The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Características
- 65 nm MirrorBit Eclipse Technology
- Single supply (vcc) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
- x16 data bus
- Asynchronous 32-byte Page read
- 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Sector Erase – Uniform 128-kbyte sectors
- Suspend and Resume commands for Program and Erase operations
- Status Register, Data Polling, and Ready/Busy pin methods to determine device status
- Advanced Sector Protection (ASP) – Volatile and no
C2948810 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

