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Infineon/CYPRESS S29GL01GT11TFIV10 product image
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Infineon/CYPRESS S29GL01GT11TFIV10RoHS

Manufacturer
Infineon/CYPRESS
MPN
S29GL01GT11TFIV10
LCSC Part #
C2944450
Packaging
TFSOP-56
Customer #
Key Attributes
1 Gb/512 Mb GL-T MIRRORBIT Flash, Parallel, 3.0 V
Datasheetpdf iconInfineon/CYPRESS S29GL01GT11TFIV10
In-Stock: 13
13 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 19.3123$ 19.31
10+$ 18.4042$ 184.04
30+$ 16.832$ 504.96
100+$ 15.46$ 1546.00
Standard Packaging910/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingTFSOP-56
Operating Temperature-40℃~+85℃
Features-
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency5MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current100uA
InterfaceParallel
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Introduction

AI Translation

The S29GL01GT/512T are MIRRORBIT™ flash products fabricated on 45-nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

Features

AI Translation
  • 45-nm MIRRORBIT™ technology
  • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
  • Versatile I/O feature - Wide I/O voltage range (V10): 1.65 V to VCC
  • x8/x16 data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer - Programming in page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Automatic error checking and correction (ECC) — internal hardware ECC with single bit error correction
  • Sector erase - Uniform 128-KB sectors
  • Suspend and Resume commands for program and erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced sector protection (ASP) - Volatile and non-volatile protection methods for each sector
  • Separate 2048-byte one-time program (OTP) array - Four lockable regions (SSR0–SSR3) - SSR0 is factory locked - SSR3 is password read protect
  • Common flash interface (CFI) parameter table
  • Temperature range / grade - Industrial (-40℃ to +85℃) - Industrial Plus (-40℃ to +105℃) - Extended (-40℃ to +125℃) - Automotive, AEC-Q100 grade 3 (-40℃ to +85℃) - Automotive, AEC-Q100 grade 2 (-40℃ to +105℃)
  • 100,000 program/erase cycles
  • 20-year data retention