Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | SOT-32-3 | |
| Current - Collector Cutoff | 2mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | SOT-32-3 | |
| Current - Collector Cutoff | 2mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are fabricated using planar substrate island technology, featuring a monolithic Darlington configuration.
Features
AI Translation
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated anti-parallel collector-emitter diode
Applications
AI Translation
- Linear and switching industrial equipment
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7084 | $ 0.71 |
| 10+ | $ 0.606 | $ 6.06 |
| 50+ | $ 0.5622 | $ 28.11 |
| 100+ | $ 0.5069 | $ 50.69 |
| 500+ | $ 0.4826 | $ 241.30 |
| 1,000+ | $ 0.4679 | $ 467.90 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | SOT-32-3 | |
| Current - Collector Cutoff | 2mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | SOT-32-3 | |
| Current - Collector Cutoff | 2mA | |
| Operating Temperature | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 60V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are fabricated using planar substrate island technology, featuring a monolithic Darlington configuration.
Features
AI Translation
- Good hFE linearity
- High fT frequency
- Monolithic Darlington configuration with integrated anti-parallel collector-emitter diode
Applications
AI Translation
- Linear and switching industrial equipment
C2927580 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



