VISHAY SI4465ADY-T1-E3
| Manufacturer | |
| MPN | SI4465ADY-T1-E3 |
| LCSC Part # | C2927409 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 8V 13.7A SO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 85nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Current - Continuous Drain(Id) | 13.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 85nC@4.5V | |
| Type | P-Channel |
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Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- 1.8 V Rated 100 % Rg Tested
- RoHS COMPLIANT HALOGEN FREE Available
- P-Channel MOSFET
In-Stock: 4
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Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6377 | $ 1.64 |
| 10+ | $ 1.4395 | $ 14.40 |
| 30+ | $ 1.3306 | $ 39.92 |
| 100+ | $ 1.2071 | $ 120.71 |
| 500+ | $ 1.0934 | $ 546.70 |
| 1,000+ | $ 1.0691 | $ 1069.10 |
Standard Packaging2500/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 85nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Current - Continuous Drain(Id) | 13.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 85nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- 1.8 V Rated 100 % Rg Tested
- RoHS COMPLIANT HALOGEN FREE Available
- P-Channel MOSFET
C2927409 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



