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SAMSUNG K4A8G085WB-BIRC product image
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SAMSUNG K4A8G085WB-BIRC

Manufacturer
MPN
K4A8G085WB-BIRC
LCSC Part #
C2920067
Packaging
FBGA-78
Customer #
Key Attributes
FBGA-78 Memory
Datasheetpdf iconSAMSUNG K4A8G085WB-BIRC
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QtyUnit Price(Reference Only)Total Amount
1+$ 17.6613$ 17.66
200+$ 6.8353$ 1367.06
500+$ 6.5951$ 3297.55
1,000+$ 6.4758$ 6475.80
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerSAMSUNG
PackagingFBGA-78

Features

AI Translation
  • Compliant with JEDEC standard 1.2V (1.14V ~ 1.26V)
  • VDDQ = 1.2V (1.14V ~ 1.26V)
  • Multiple frequency support: 800 MHz fCK at 1600Mb/s/pin, 933 MHz fCK at 1866Mb/s/pin, 1067MHz fCK at 2133Mb/s/pin, 1200MHz fCK at 2400Mb/s/pin, 1333MHz fCK at 2666Mb/s/pin
  • 16 banks (4 bank groups)
  • Programmable CAS Latency (posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  • Programmable Additive Latency: 0, CL-2 or CL-1 clock cycles
  • Programmable CAS Write Latency (CWL) = 9, 11 (DDR4-1600), 10, 12 (DDR4-1866), 11, 14 (DDR4-2133), 12, 16 (DDR4-2400) and 14, 18 (DDR4-2666)
  • 8-bit prefetch
  • Burst Length: 8, 4 (seamless read or write not allowed when tCCD = 4 [on-the-fly change via A12 or MRS])
  • Differential bidirectional data strobe
  • Internal (self) calibration: on-die self-calibration via ZQ pin (RZQ: 240Ω ±1%)
  • On-Die Termination via ODT pin
  • Average refresh interval: 7.8µs when TCASE below 85°C, 3.9µs when 85°C < TCASE ≤ 95°C
  • Industrial temperature range support (-40 ~ 95°C)
  • tREFI = 7.8µs at -40°C ≤ TCASE ≤ 85°C
  • tREFI = 3.9µs at 85°C < TCASE ≤ 95°C
  • Connectivity Test Mode (TEN) support
  • Asynchronous reset
  • Package: 78-ball FBGA - x4/x8
  • All lead-free products RoHS compliant
  • All products halogen-free
  • CRC support