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SPTECH 2N6052RoHS

Manufacturer
SPTECHAsian Brands
MPN
2N6052
LCSC Part #
C2908020
Packaging
TO-3
Customer #
Key Attributes
Silicon PNP Darlingtion Power Transistor
Datasheetpdf iconSPTECH 2N6052
In-Stock: 13
13 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.5455$ 3.3683$ 3.37
10+$ 3.0701$ 2.9166$ 29.17
25+$ 2.6823$ 2.5482$ 63.71
100+$ 2.3967$ 2.2769$ 227.69
500+$ 2.2652$ 2.1520$ 1076.00
1,000+$ 2.2052$ 2.0950$ 2095.00
Standard Packaging25/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerSPTECH
PackagingTO-3
Vbe Saturation(VBE(sat))4V
Operating Temperature-65℃~+150℃
Vbe On(VBE(on))2.8V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain18000
Pd - Power Dissipation150W
Current - Collector(Ic)12A
typePNP
Vce Saturation(VCE(sat))3V
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Introduction

AI Translation

Built-in base-emitter shunt resistor • High DC current gain - hFE = 750 (min), @ IC = -6A

  • Collector-emitter sustaining voltage VCEO(SUS) = -100 V (min)
  • Complementary to 2N6059

Applications

AI Translation

Designed for general-purpose amplifier and low-frequency switching applications.