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GigaDevice Semicon Beijing GD25WQ80ETIGR product image
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GigaDevice Semicon Beijing GD25WQ80ETIGRRoHS

Manufacturer
GigaDevice Semicon BeijingAsian Brands
MPN
GD25WQ80ETIGR
LCSC Part #
C2904432
Packaging
SOP-8-150mil
Customer #
Key Attributes
8Mbit 1.65V~3.6V 104MHz SPI SOP-8-150mil Memory RoHS
Datasheetpdf iconGigaDevice Semicon Beijing GD25WQ80ETIGR
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.0363$ 2.04
10+$ 1.7565$ 17.57
30+$ 1.6029$ 48.09
100+$ 1.4282$ 142.82
500+$ 1.3506$ 675.30
1,000+$ 1.315$ 1315.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerGigaDevice Semicon Beijing
PackagingSOP-8-150mil
Operating Temperature-
Features-
Memory Size8Mbit
Voltage - Supply1.65V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency104MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)1ms
Standby Supply Current11uA
InterfaceSPI
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Introduction

AI Translation

The GD25WQ80E (8M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 208Mbit/s, and the Quad I/O data is transferred with speed of 416Mbit/s.

Features

AI Translation
  • 8M-bit Serial Flash - 1024K-Byte - 256 Bytes per programmable page
  • Standard, Dual, Quad SPI
    • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
    • Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
    • Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency
    • 104MHz for fast read with 30PF load
    • Dual I/O Data transfer up to 208Mbits/s
    • Quad I/O Data transfer up to 416Mbits/s
  • Software/Hardware Write Protection
    • Write protect all/portion of memory via software
    • Enable/Disable protection with WP# Pin
    • Top/Bottom Block protection
  • Endurance and Data Retention
    • Minimum 100,000 Program/Erase Cycles
    • 20-year data retention typical
  • Allows XiP (eXecute in Place) Operation
    • High speed Read reduce overall XiP instruction fetch time
    • Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed
    • Page Program time: 1ms typical
    • Sector Erase time: 100ms typical
    • Block Erase time: 0.3s/0.5s typical
    • Chip Erase time: 5s typical
  • Flexible Architecture
    • Uniform Sector of 4K-Byte
    • Uniform Block of 32/64K-Byte
  • Low Power Consumption
    • 11μA typical standby current
    • 0.1μA typical deep power down current
  • Advanced Security Features
    • 128-bit Unique ID for each device
    • Serial Flash Discoverable parameters (SFDP) register
    • 2x1024 -Byte Security Registers With OTP Locks
  • Single Power Supply Voltage
    • Full voltage range: 1.65-3.6V
  • Package Information
    • SOP8 150mil
    • SOP8 208mil
    • USON8 (3x2mm, 0.45mm thickness)
    • WSON8 (6x5mm)