onsemi NTMFS0D5N03CT1G
| Manufacturer | |
| MPN | NTMFS0D5N03CT1G |
| LCSC Part # | C2902064 |
| Packaging | SO-8FL |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 464A SO-8FL |
| Datasheet | |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.54nF | |
| Current - Continuous Drain(Id) | 464A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 200W | |
| RDS(on) | 0.78mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.54nF | |
| Current - Continuous Drain(Id) | 464A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| RDS(on) | 0.78mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC@10V | |
| Type | N-Channel |
Introduction
SVF20NE50PN is an N-channel enhancement-mode power MOSFET fabricated using Silan Semiconductor's proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and enhanced guard ring termination are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Features
- Advanced Package (5x6mm) with Excellent Thermal Conduction
- Ultra Low RDS(on) to Improve System Efficiency
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- ORing
- Motor Drive
- Power Load Switch
- DC−DC Converters
- Battery Management and Protection
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.3076 | $ 7.31 |
| 10+ | $ 6.5749 | $ 65.75 |
| 30+ | $ 6.1411 | $ 184.23 |
| 100+ | $ 5.7009 | $ 570.09 |
| 500+ | $ 5.4978 | $ 2748.90 |
| 1,500+ | $ 5.4068 | $ 8110.20 |
Standard Packaging1500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.54nF | |
| Current - Continuous Drain(Id) | 464A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 200W | |
| RDS(on) | 0.78mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 6.54nF | |
| Current - Continuous Drain(Id) | 464A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| RDS(on) | 0.78mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13nF | |
| Gate Charge(Qg) | 178nC@10V | |
| Type | N-Channel |
Introduction
SVF20NE50PN is an N-channel enhancement-mode power MOSFET fabricated using Silan Semiconductor's proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and enhanced guard ring termination are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Features
- Advanced Package (5x6mm) with Excellent Thermal Conduction
- Ultra Low RDS(on) to Improve System Efficiency
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- ORing
- Motor Drive
- Power Load Switch
- DC−DC Converters
- Battery Management and Protection
C2902064 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTMFS0D55N03CGT1G | onsemi | SO-8FL | 8 | $ 2.8594 | ||
| NTMFS0D6N03CT1G | onsemi | SO-8FL | 5 | $ 3.7024 | ||
| SQJ128ELP-T1_GE3 | VISHAY | PowerPAK-SO-8 | 10 | $ 1.1091 | ||
| FDMS8050ET30 | onsemi | Power-56-8 | 9 | $ 6.1866 | ||
| NTMFS0D4N04XMT1G | onsemi | SO-8FL | 0 | $ 1.4841 | ||
| AONS30300 | AOS | DFN-8(5x6) | 0 | $ 3.2321 | ||
| ISCH42N04LM7ATMA1 | Infineon | SON-8(5x6) | 0 | $ 3.7107 | ||
| SQJ126EP-T1_GE3 | VISHAY | PowerPAK-SO-8 | 0 | $ 1.0184 | ||
| NVMFWS0D4N04XMT1G | onsemi | DFNW-5(5x6)(SO-8-FL) | 0 | $ 8.0322 | ||
| SIR818DP-T1-GE3 | VISHAY | PowerPAKSO-8 | 0 | $ 1.3453 |



