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TI CSD18535KTTTRoHS

Manufacturer
TI
MPN
CSD18535KTTT
LCSC Part #
C2877331
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 60V 200A TO-263-3
Datasheetpdf iconTI CSD18535KTTT
In-Stock: 2
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QtyUnit PriceTotal Amount
1+$ 3.7433$ 3.74
10+$ 3.2331$ 32.33
30+$ 2.8146$ 84.44
100+$ 2.5082$ 250.82
500+$ 2.3676$ 1183.80
1,000+$ 2.3044$ 2304.40
Standard Packaging50/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)200A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.62nF
Gate Charge(Qg)81nC@10V
TypeN-Channel
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Introduction

AI Translation

This 60V, 1.6mΩ, D2PAK (TO-263) power MOSFET is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche-rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Motor control