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EDA 모델EasyEDA
Rayson RS256M16ZADD-75DT
| 제조업체 | RaysonAsian Brands |
| 제조사 품번 | RS256M16ZADD-75DT |
| LCSC 번호 | C2840165 |
| 포장 | FBGA-96(7.5x13.5) |
| 고객 번호 | |
| 주요 제원 | 4Gbit 1.2V 1.333GHz DDR4 SDRAM FBGA-96(7.5x13.5) Memory RoHS |
| 데이터시트 |  Rayson RS256M16ZADD-75DT |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Rayson | |
| 포장 | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.2V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | - |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Rayson | |
| 포장 | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function | |
| Refresh Current | - |
| 타입 | 설명 | |
|---|---|---|
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.2V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | - |
오류 신고유사 제품 보기 (0) >
주요 특징
AI 번역
- VDD = VDDQ = 1.2V ± 60mV
- VPP = 2.5V, -125mV/+250mV
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- TC of 0℃ to 95℃ – 64ms, 8192-cycle refresh at 0℃ to 85℃ – 32ms at 85℃ to 95℃
- 16 internal banks (x4, x8): 4 groups of 4 banks each
- 8 internal banks (x16): 2 groups of 4 banks each
- 8n-bit prefetch architecture
- Programmable data strobe preambles
- Data strobe preamble training
- Command/Address latency (CAL)
- Multipurpose register READ and WRITE capability
- Write and read leveling
- Self refresh mode
- Low-power auto self refresh (LPASR)
- Temperature controlled refresh (TCR)
- Fine granularity refresh
- Self refresh abort
- Maximum power saving
- Output driver calibration
- Nominal, park, and dynamic on-die termination (ODT)
- Data bus inversion (DBI) for data bus
- Command/Address (CA) parity
- Databus write cyclic redundancy check (CRC)
- Per-DRAM addressability
- Connectivity test (x16)
- Post package repair (PPR) and soft post package repair (sPPR) modes
- JEDEC JESD-79-4 compliant
재고 있음: 20
20 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 26.687 | $ 26.69 |
| 10+ | $ 25.5802 | $ 255.80 |
| 30+ | $ 23.6505 | $ 709.52 |
| 100+ | $ 21.9788 | $ 2197.88 |
표준 패키지198/Full Tray | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Rayson | |
| 포장 | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function | |
| Refresh Current | - | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.2V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | - |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Rayson | |
| 포장 | FBGA-96(7.5x13.5) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function | |
| Refresh Current | - |
| 타입 | 설명 | |
|---|---|---|
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.2V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | - |
오류 신고유사 제품 보기 (0) >
주요 특징
AI 번역
- VDD = VDDQ = 1.2V ± 60mV
- VPP = 2.5V, -125mV/+250mV
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- TC of 0℃ to 95℃ – 64ms, 8192-cycle refresh at 0℃ to 85℃ – 32ms at 85℃ to 95℃
- 16 internal banks (x4, x8): 4 groups of 4 banks each
- 8 internal banks (x16): 2 groups of 4 banks each
- 8n-bit prefetch architecture
- Programmable data strobe preambles
- Data strobe preamble training
- Command/Address latency (CAL)
- Multipurpose register READ and WRITE capability
- Write and read leveling
- Self refresh mode
- Low-power auto self refresh (LPASR)
- Temperature controlled refresh (TCR)
- Fine granularity refresh
- Self refresh abort
- Maximum power saving
- Output driver calibration
- Nominal, park, and dynamic on-die termination (ODT)
- Data bus inversion (DBI) for data bus
- Command/Address (CA) parity
- Databus write cyclic redundancy check (CRC)
- Per-DRAM addressability
- Connectivity test (x16)
- Post package repair (PPR) and soft post package repair (sPPR) modes
- JEDEC JESD-79-4 compliant
C2840165 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |