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ST STI20N65M5
| Manufacturer | |
| MPN | STI20N65M5 |
| LCSC Part # | C2832819 |
| Packaging | I2PAK(TO-262) |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 18A I2PAK(TO-262) |
| Datasheet |  ST STI20N65M5 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | I2PAK(TO-262) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 38pF | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 130W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | I2PAK(TO-262) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 38pF | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 25
25 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.5597 | $ 4.56 |
| 10+ | $ 3.8652 | $ 38.65 |
| 30+ | $ 3.4514 | $ 103.54 |
| 100+ | $ 3.0328 | $ 303.28 |
| 500+ | $ 2.8397 | $ 1419.85 |
| 1,000+ | $ 2.752 | $ 2752.00 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | I2PAK(TO-262) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 38pF | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 130W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | I2PAK(TO-262) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 38pF | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| RDS(on) | 190mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C2832819 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HCH65R180 | HUAKE | TO-262 | 208 | $ 0.7167 | ||
| IPI65R190C6-VB | VBsemi Elec | I2PAK(TO-262) | 5 | $2.0541 $2.4165 | ||
| VBN165R20S | VBsemi Elec | I2PAK(TO-262) | 5 | $2.0541 $2.4165 | ||
| AOW20S60-VB | VBsemi Elec | TO-262 | 5 | $ 2.5986 | ||
| AOW25S65-VB | VBsemi Elec | I2PAK(TO-262) | 4 | $2.0541 $2.4165 | ||
| LSF65R180GT | LONTEN | TO-262-3 | 3 | $ 1.4906 | ||
| STI24N60M2 | ST | I2PAK(TO-262) | 8 | $ 3.4962 | ||
| IPI65R190C6 | Infineon | TO-262-3 | 0 | $ 4.4609 | ||
| IPI65R190C | Infineon | TO-262-3-1 | 0 | $ 2.0429 | ||
| AOW25S65 | AOS | TO-262 | 0 | $ 5.3589 |