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JSMSEMI HAT2064RJ
| Manufacturer | JSMSEMIAsian Brands |
| MPN | HAT2064RJ |
| LCSC Part # | C28314409 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | N-Channel, Current:20A, Voltage:30V |
| Datasheet |  JSMSEMI HAT2064RJ |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 6.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 6.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 20A, RDS(ON) < 6.5mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.4014 | $ 0.40 |
| 200+ | $ 0.1602 | $ 32.04 |
| 500+ | $ 0.1548 | $ 77.40 |
| 1,000+ | $ 0.1522 | $ 152.20 |
Standard Packaging50/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 6.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -50℃~+150℃ | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 6.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.32nF | |
| Gate Charge(Qg) | 23.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 20A, RDS(ON) < 6.5mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation
C28314409 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AO4728 | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| AP9412GM | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| FDS6699S | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| NTMS4920NR2G | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| QM3006S | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| TPC8026 | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| AO4354 | JSMSEMI | SOP-8 | 0 | $ 0.7084 | ||
| MDS1521URH | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| AO4310 | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| DMN3007LSS-13 | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| FDS8670-NL | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| EMB06N03G | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| UPA2721AGR | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| TPC8045-H | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| UT4446G-S08-R | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| UPA2708GR | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| TSM4872CS | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| TPC8036-H | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| TPC8003 | JSMSEMI | SOP-8 | 0 | $ 0.4014 | ||
| AO4456 | JSMSEMI | SOP-8 | 0 | $ 0.2365 |