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BOYAMICRO BY25Q40ALUIG(R)
| Manufacturer | BOYAMICROAsian Brands |
| MPN | BY25Q40ALUIG(R) |
| LCSC Part # | C2829468 |
| Packaging | USON-8-EP(2x3) |
| Customer # | |
| Key Attributes | 4MBIT SPI NOR FLASH |
| Datasheet |  BOYAMICRO BY25Q40ALUIG(R) |
| Alternative Parts | 1 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | BOYAMICRO | |
| Packaging | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | SPI | |
| Standby Supply Current | 0.6uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | BOYAMICRO | |
| Packaging | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | SPI | |
| Standby Supply Current | 0.6uA |
Introduction
The BY25Q40AL is 4M-bit Serial Peripheral Interface (SPI) Flash memory, designed for using in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device uses a single low voltage power supply, ranging from 1.65 Volt to 2.0 Volt, and supports JEDEC standard manufacturer and device ID, a 128-bit Unique Serial Number and three 512-bytes Secur
Features
- 4M BIT SPI NOR FLASH
- Serial Peripheral Interface (SPI)
- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD
- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD
- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3
- Software Reset
- Read
- Normal Read Data: 33MHz clock rate
- others Read Data: 85MHz clock rate
- Program
- Serial-input Page Program up to 256bytes
- Dual-input Page Program up to 256bytes
- Quad-input Page Program up to 256bytes
- Program Suspend and Resume
- Erase
- Page erase (256-byte)
- Block erase (64/32 KB)
- Sector erase (4 KB)
- Chip erase
- Erase Suspend and Resume
- Program/Erase Speed
- Page Program time: 2ms typical
- Page Erase time: 8ms typical
- Sector/Block Erase time: 8ms typical
- Chip Erase time: 8ms typical
- Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
- Low Power Consumption
- 3mA maximum active current
- 0.6uA maximum power down current
- Software/Hardware Write Protection
- 3x512-Byte Security Registers with OTP Lock
- Enable/Disable protection with WP Pin
- Write protect all/portion of memory via software protect
- Top or Bottom, Sector or Block selection
- Temperature Range
- Commercial 0℃ to +70℃
- Industrial -40℃ to +85℃
- Cycling Endurance/Data Retention
- Typical 100k Program-Erase cycles on any sector
- Typical 20-year data retention
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3047 | $ 1.52 |
| 50+ | $ 0.2429 | $ 12.15 |
| 150+ | $ 0.2163 | $ 32.45 |
| 500+ | $ 0.1833 | $ 91.65 |
| 2,500+ | $ 0.1685 | $ 421.25 |
| 5,000+ | $ 0.1597 | $ 798.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | BOYAMICRO | |
| Packaging | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | SPI | |
| Standby Supply Current | 0.6uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | BOYAMICRO | |
| Packaging | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | SPI | |
| Standby Supply Current | 0.6uA |
Introduction
The BY25Q40AL is 4M-bit Serial Peripheral Interface (SPI) Flash memory, designed for using in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device uses a single low voltage power supply, ranging from 1.65 Volt to 2.0 Volt, and supports JEDEC standard manufacturer and device ID, a 128-bit Unique Serial Number and three 512-bytes Secur
Features
- 4M BIT SPI NOR FLASH
- Serial Peripheral Interface (SPI)
- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD
- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD
- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3
- Software Reset
- Read
- Normal Read Data: 33MHz clock rate
- others Read Data: 85MHz clock rate
- Program
- Serial-input Page Program up to 256bytes
- Dual-input Page Program up to 256bytes
- Quad-input Page Program up to 256bytes
- Program Suspend and Resume
- Erase
- Page erase (256-byte)
- Block erase (64/32 KB)
- Sector erase (4 KB)
- Chip erase
- Erase Suspend and Resume
- Program/Erase Speed
- Page Program time: 2ms typical
- Page Erase time: 8ms typical
- Sector/Block Erase time: 8ms typical
- Chip Erase time: 8ms typical
- Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
- Low Power Consumption
- 3mA maximum active current
- 0.6uA maximum power down current
- Software/Hardware Write Protection
- 3x512-Byte Security Registers with OTP Lock
- Enable/Disable protection with WP Pin
- Write protect all/portion of memory via software protect
- Top or Bottom, Sector or Block selection
- Temperature Range
- Commercial 0℃ to +70℃
- Industrial -40℃ to +85℃
- Cycling Endurance/Data Retention
- Typical 100k Program-Erase cycles on any sector
- Typical 20-year data retention
C2829468 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BY25Q40BLUIG(R) | BOYAMICRO | USON-8(2x3) | 2,435 | $ 0.1087 |