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Truesemi TSA82N25M
| Manufacturer | TruesemiAsian Brands |
| MPN | TSA82N25M |
| LCSC Part # | C2829040 |
| Packaging | TO-3P-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 82A TO-3P-3 |
| Datasheet |  Truesemi TSA82N25M |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Truesemi | |
| Packaging | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 783pF | |
| Current - Continuous Drain(Id) | 82A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 550W | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.904nF | |
| Gate Charge(Qg) | 123nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Truesemi | |
| Packaging | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 783pF | |
| Current - Continuous Drain(Id) | 82A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 550W | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.904nF | |
| Gate Charge(Qg) | 123nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for High power inverter, cutting machine.
Features
AI Translation
- 82A, 250V, Max.RDS(on) = 35mΩ @ VGS = 10V
- Low gate charge(typical 70nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- High power inverter
- Cutting machine
In-Stock: 17
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.0582 | $ 4.06 |
| 10+ | $ 3.6221 | $ 36.22 |
| 30+ | $ 3.3618 | $ 100.85 |
| 90+ | $ 2.27 | $ 204.30 |
| 510+ | $ 2.1495 | $ 1096.25 |
| 990+ | $ 2.0958 | $ 2074.84 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Truesemi | |
| Packaging | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 783pF | |
| Current - Continuous Drain(Id) | 82A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 550W | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.904nF | |
| Gate Charge(Qg) | 123nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Truesemi | |
| Packaging | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 783pF | |
| Current - Continuous Drain(Id) | 82A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 550W | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.904nF | |
| Gate Charge(Qg) | 123nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for High power inverter, cutting machine.
Features
AI Translation
- 82A, 250V, Max.RDS(on) = 35mΩ @ VGS = 10V
- Low gate charge(typical 70nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- High power inverter
- Cutting machine
C2829040 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TSA82N30M | Truesemi | TO-3P-3 | 0 | $ 4.2777 |