onsemi MBT3946DW1T1G
| Manufacturer | |
| MPN | MBT3946DW1T1G |
| LCSC Part # | C28272 |
| Packaging | SC-88 |
| Customer # | |
| Key Attributes | TRANS NPN+PNP 40V 200mA SC-88 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88 | |
| Current - Collector Cutoff | 50nA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | 150mW | |
| Emitter-Base Voltage VEBO | 6V | |
| Transition frequency(fT) | 300MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 200mA | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88 | |
| Current - Collector Cutoff | 50nA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | 150mW |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Transition frequency(fT) | 300MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 200mA | |
| Operating Temperature | -55℃~+150℃ |
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Introduction
AI Translation
The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
AI Translation
- hFE, 100−300
- Low VCE(sat), ≤0.4 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
In-Stock: 7,270
7,270 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.078 | $ 0.78 |
| 100+ | $ 0.0632 | $ 6.32 |
| 300+ | $ 0.0558 | $ 16.74 |
| 3,000+ | $ 0.0469 | $ 140.70 |
| 6,000+ | $ 0.0424 | $ 254.40 |
| 9,000+ | $ 0.0402 | $ 361.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88 | |
| Current - Collector Cutoff | 50nA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | 150mW | |
| Emitter-Base Voltage VEBO | 6V | |
| Transition frequency(fT) | 300MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 200mA | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88 | |
| Current - Collector Cutoff | 50nA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | 150mW |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Transition frequency(fT) | 300MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 200mA | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
AI Translation
- hFE, 100−300
- Low VCE(sat), ≤0.4 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
C28272 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



