- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
SAMSUNG K4A8G165WB-BCRC
| Manufacturer | |
| MPN | K4A8G165WB-BCRC |
| LCSC Part # | C2803252 |
| Packaging | FBGA-96 |
| Customer # | |
| Key Attributes | DDR4 SDRAM |
| Datasheet |  SAMSUNG K4A8G165WB-BCRC |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | SAMSUNG | |
| Packaging | FBGA-96 | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto precharge function;Asynchronous reset function;CRC function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | - | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 1.14V~1.26V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | 41.9mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | SAMSUNG | |
| Packaging | FBGA-96 | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto precharge function;Asynchronous reset function;CRC function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | - |
| Type | Description | |
|---|---|---|
| Memory Size | 8Gbit | |
| Voltage - Supply | 1.14V~1.26V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | 41.9mA |
Report an ErrorShow similar products (0) >
Features
AI Translation
- JEDEC standard 1.2V (1.14V~1.26V)
- VDDQ = 1.2V (1.14V~1.26V)
- VPP = 2.5V (2.375V~2.75V)
- 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
- 8 Banks (2 Bank Groups)
- Programmable CAS Latency (posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
- Programmable CAS Write Latency (CWL) = 9, 11 (DDR4 - 1600), 10, 12 (DDR4 - 1866), 11, 14 (DDR4 - 2133), 12, 16 (DDR4 - 2400) and 14, 18 (DDR4 - 2666)
- 8 - bit pre - fetch
- Burst Length: 8, 4 with fCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi - directional Differential Data - Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ±1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Support Industrial Temp (-40~95°C) - tREFI 7.8us at -40°C ≤ TCASE ≤ 85°C - tREFI 3.9us at 85°C < TCASE ≤ 95°C
- Asynchronous Reset
- Package: 96 balls FBGA - x16
- All of Lead - Free products are compliant for RoHS
In-Stock: 120
120 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 47.1766 | $ 47.18 |
| 30+ | $ 45.128 | $ 1353.84 |
Standard Packaging112/Full Tray | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | SAMSUNG | |
| Packaging | FBGA-96 | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto precharge function;Asynchronous reset function;CRC function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | - | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 1.14V~1.26V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | 41.9mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | SAMSUNG | |
| Packaging | FBGA-96 | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto precharge function;Asynchronous reset function;CRC function;Dynamic on-chip termination;ZQ calibration function | |
| Refresh Current | - |
| Type | Description | |
|---|---|---|
| Memory Size | 8Gbit | |
| Voltage - Supply | 1.14V~1.26V | |
| Clock Frequency | 1.333GHz | |
| Memory Format | DDR4 SDRAM | |
| Current - Supply | 41.9mA |
Report an ErrorShow similar products (0) >
Features
AI Translation
- JEDEC standard 1.2V (1.14V~1.26V)
- VDDQ = 1.2V (1.14V~1.26V)
- VPP = 2.5V (2.375V~2.75V)
- 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
- 8 Banks (2 Bank Groups)
- Programmable CAS Latency (posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
- Programmable CAS Write Latency (CWL) = 9, 11 (DDR4 - 1600), 10, 12 (DDR4 - 1866), 11, 14 (DDR4 - 2133), 12, 16 (DDR4 - 2400) and 14, 18 (DDR4 - 2666)
- 8 - bit pre - fetch
- Burst Length: 8, 4 with fCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi - directional Differential Data - Strobe
- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ±1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Support Industrial Temp (-40~95°C) - tREFI 7.8us at -40°C ≤ TCASE ≤ 85°C - tREFI 3.9us at 85°C < TCASE ≤ 95°C
- Asynchronous Reset
- Package: 96 balls FBGA - x16
- All of Lead - Free products are compliant for RoHS
C2803252 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |