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SAMSUNG K4A8G165WB-BCRC product image
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SAMSUNG K4A8G165WB-BCRCRoHS

Manufacturer
MPN
K4A8G165WB-BCRC
LCSC Part #
C2803252
Packaging
FBGA-96
Customer #
Key Attributes
DDR4 SDRAM
Datasheetpdf iconSAMSUNG K4A8G165WB-BCRC
In-Stock: 208
208 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 22.7692$ 22.77
30+$ 21.5665$ 647.00
Standard Packaging112/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerSAMSUNG
PackagingFBGA-96
Refresh Current-
Memory Size8Gbit
Voltage - Supply1.14V~1.26V
Operating temperature-40℃~+95℃
Clock Frequency1.333GHz
FeaturesAuto precharge function;Asynchronous reset function;CRC function;Dynamic on-chip termination;ZQ calibration function
Memory FormatDDR4 SDRAM
Current - Supply41.9mA

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging112
Sales UnitPiece

Features

AI Translation
  • JEDEC standard 1.2V (1.14V~1.26V)
  • VDDQ = 1.2V (1.14V~1.26V)
  • VPP = 2.5V (2.375V~2.75V)
  • 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
  • 8 Banks (2 Bank Groups)
  • Programmable CAS Latency (posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  • Programmable CAS Write Latency (CWL) = 9, 11 (DDR4 - 1600), 10, 12 (DDR4 - 1866), 11, 14 (DDR4 - 2133), 12, 16 (DDR4 - 2400) and 14, 18 (DDR4 - 2666)
  • 8 - bit pre - fetch
  • Burst Length: 8, 4 with fCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
  • Bi - directional Differential Data - Strobe
  • Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ±1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Support Industrial Temp (-40~95°C) - tREFI 7.8us at -40°C ≤ TCASE ≤ 85°C - tREFI 3.9us at 85°C < TCASE ≤ 95°C
  • Asynchronous Reset
  • Package: 96 balls FBGA - x16
  • All of Lead - Free products are compliant for RoHS