MXIC MX60LF8G18AC-TITR
| 제조업체 | |
| 제조사 품번 | MX60LF8G18AC-TITR |
| LCSC 번호 | C2802772 |
| 포장 | - |
| 고객 번호 | |
| 주요 제원 | 8Gbit 2.7V~3.6V Memory RoHS |
| 데이터시트 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | MXIC | |
| 포장 | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Bad block management function;ECC error correction function;OTP region write protection and lock function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | 100uA | |
| Interface | - |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | MXIC | |
| 포장 | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Bad block management function;ECC error correction function;OTP region write protection and lock function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | 100uA | |
| Interface | - |
개요
MX60LF8G18AC is a 3V single-supply 8Gb NAND flash memory using 2-bit-per-cell technology. The device adopts a standard NAND flash interface, enabling efficient data transfer through multiplexed command, address, and data I/O ports. It supports the ONFI 1.0 standard interface, providing fundamental operations including page program, block erase, and page read, along with advanced features such as cache read, cache program, two-plane operations, and interleaved die operations for enhanced performance. The device also integrates status read, reset, parameter page read, ID read, and feature set capabilities. Operating temperature range is -40℃ ~ 85℃, available in a TSOP48 package.
주요 특징
- Organization: 8Gb (1GByte), with (8192 + 256)-byte pages and (512 + 16)KByte blocks
- Supply Voltage: 3V single power supply (2.7V ~ 3.6V)
- Fast Read Time: 25µs (typical, first access)
- Fast Program Time: 300µs (typical, per page)
- Fast Erase Time: 1.5ms (typical, per block)
- Command/Address/Data input through multiplexed I/O ports
- Hardware Data Protection: write protection during power transitions
- Reliable CMOS floating gate technology
- Endurance: minimum 100,000 program/erase cycles per block
- Data Retention: 10 years
- Package: TSOP48
- Temperature Range: -40℃ ~ 85℃
- ONFI 1.0 compliant
- Supports two-plane operation and interleaved die operation
- Supports cache read and cache program
- Integrated one-time programmable (OTP) area
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 66.5676 | $ 66.57 |
| 200+ | $ 25.7614 | $ 5152.28 |
| 500+ | $ 24.8551 | $ 12427.55 |
| 1,500+ | $ 24.4076 | $ 36611.40 |
표준 패키지1500/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | MXIC | |
| 포장 | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Bad block management function;ECC error correction function;OTP region write protection and lock function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | 100uA | |
| Interface | - |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | MXIC | |
| 포장 | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Bad block management function;ECC error correction function;OTP region write protection and lock function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | 100uA | |
| Interface | - |
개요
MX60LF8G18AC is a 3V single-supply 8Gb NAND flash memory using 2-bit-per-cell technology. The device adopts a standard NAND flash interface, enabling efficient data transfer through multiplexed command, address, and data I/O ports. It supports the ONFI 1.0 standard interface, providing fundamental operations including page program, block erase, and page read, along with advanced features such as cache read, cache program, two-plane operations, and interleaved die operations for enhanced performance. The device also integrates status read, reset, parameter page read, ID read, and feature set capabilities. Operating temperature range is -40℃ ~ 85℃, available in a TSOP48 package.
주요 특징
- Organization: 8Gb (1GByte), with (8192 + 256)-byte pages and (512 + 16)KByte blocks
- Supply Voltage: 3V single power supply (2.7V ~ 3.6V)
- Fast Read Time: 25µs (typical, first access)
- Fast Program Time: 300µs (typical, per page)
- Fast Erase Time: 1.5ms (typical, per block)
- Command/Address/Data input through multiplexed I/O ports
- Hardware Data Protection: write protection during power transitions
- Reliable CMOS floating gate technology
- Endurance: minimum 100,000 program/erase cycles per block
- Data Retention: 10 years
- Package: TSOP48
- Temperature Range: -40℃ ~ 85℃
- ONFI 1.0 compliant
- Supports two-plane operation and interleaved die operation
- Supports cache read and cache program
- Integrated one-time programmable (OTP) area
C2802772 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

