LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STD11N60DM2 product image
Images for reference only

ST STD11N60DM2RoHS

Manufacturer
ST
MPN
STD11N60DM2
LCSC Part #
C2688635
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 10A DPAK
Datasheetpdf iconST STD11N60DM2
In-Stock: 1,171
1,171 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2637$ 1.26
10+$ 1.1536$ 11.54
30+$ 1.0855$ 32.57
100+$ 1.0142$ 101.42
500+$ 0.9818$ 490.90
1,000+$ 0.9689$ 968.90
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1.08pF
RDS(on)420mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)614pF
Gate Charge(Qg)16.5nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications