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ST STD13N60DM2

Manufacturer
ST
MPN
STD13N60DM2
LCSC Part #
C2688628
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 600V 11A TO-252(DPAK)
DatasheetST STD13N60DM2
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Output Capacitance(Coss)38pF
Ciss-Input Capacitance730pF
Pd - Power Dissipation110W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Reverse Transfer Capacitance (Crss)0.9pF
RDS(on)365mΩ@10V
Number1 N-channel
Gate Charge(Qg)19nC@10V
Vgs±25V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Introduction

AI Translation

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications