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ST STD13N60DM2 product image
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ST STD13N60DM2RoHS

Manufacturer
ST
MPN
STD13N60DM2
LCSC Part #
C2688628
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 600V 11A TO-252(DPAK)
Datasheetpdf iconST STD13N60DM2
In-Stock: 2,441
2,441 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.238$ 1.24
10+$ 1.0447$ 10.45
30+$ 0.9391$ 28.17
100+$ 0.8189$ 81.89
500+$ 0.7652$ 382.60
1,000+$ 0.7409$ 740.90
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)365mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)730pF
Gate Charge(Qg)19nC@10V
TypeN-Channel
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Introduction

AI Translation

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

AI Translation
  • Switching applications