Infineon IRFP9140NPBF
| Manufacturer | |
| MPN | IRFP9140NPBF |
| LCSC Part # | C2685 |
| Packaging | TO-247AC-3 |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 23A TO-247AC-3 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 400pF | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 117mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 97nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 400pF | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 117mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 97nC@10V | |
| Type | P-Channel |
Introduction
The 5th Generation HEXFET utilizes advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The TO-247 package is intended for commercial and industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar to the earlier TO-218 package, but features improved performance due to its isolated mounting hole.
Features
- Advanced process technology
- Dynamic dv/dt rating
- 175°C operating temperature
- P-channel
- Fast switching
- Fully avalanche rated
- Lead-free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4638 | $ 1.46 |
| 10+ | $ 1.2591 | $ 12.59 |
| 25+ | $ 1.147 | $ 28.68 |
| 100+ | $ 1.0203 | $ 102.03 |
| 400+ | $ 0.9635 | $ 385.40 |
| 800+ | $ 0.9391 | $ 751.28 |
Standard Packaging25/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 400pF | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 117mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 97nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 400pF | |
| Current - Continuous Drain(Id) | 23A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 117mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 97nC@10V | |
| Type | P-Channel |
Introduction
The 5th Generation HEXFET utilizes advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The TO-247 package is intended for commercial and industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar to the earlier TO-218 package, but features improved performance due to its isolated mounting hole.
Features
- Advanced process technology
- Dynamic dv/dt rating
- 175°C operating temperature
- P-channel
- Fast switching
- Fully avalanche rated
- Lead-free
C2685 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



