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STANSON Tech. STP601D product image
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STANSON Tech. STP601DRoHS

Manufacturer
STANSON Tech.Asian Brands
MPN
STP601D
LCSC Part #
C2682830
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 60V 30A TO-252
Datasheetpdf iconSTANSON Tech. STP601D
In-Stock: 2,385
2,385 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2715$ 1.36
50+$ 0.215$ 10.75
150+$ 0.1908$ 28.62
500+$ 0.1606$ 80.30
2,500+$ 0.127$ 317.50
5,000+$ 0.1189$ 594.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerSTANSON Tech.
PackagingTO-252
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)153pF
RDS(on)20mΩ@10V;27mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.6nF
Gate Charge(Qg)58nC@10V
TypeP-Channel
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Introduction

AI Translation

STP601/STP601D are P-channel logic-level enhancement-mode power MOSFETs fabricated using high cell density DMOS trench technology. The STP601D is specifically designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

Features

AI Translation
  • 60V/-20.0A, RDS(ON) = 20 mΩ (typical) at VGS = -10V
  • 60V/-20.0A, RDS(ON) = 27 mΩ at VGS = -4.5V
  • Ultra-high density cell design for extremely low RDS(ON)
  • Excellent on-resistance and maximum DC current capability
  • TO-252, TO-251 package