15% OFF
- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
VBsemi Elec TPC8A03-H-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | TPC8A03-H-VB |
| LCSC-Nr. | C2680907 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 18A SO-8 |
| Datenblatt |  VBsemi Elec TPC8A03-H-VB |
| Alternative Teile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 195pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 195pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Anwendungen
KI-Übersetzung
- Laptop CPU core
- High-end switching
Vorrätig: 20
20 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4916$ 0.4179 | $ 0.42 |
| 10+ | $ 0.3904$ 0.3319 | $ 3.32 |
| 30+ | $ 0.347$ 0.2950 | $ 8.85 |
| 100+ | $ 0.2924$ 0.2486 | $ 24.86 |
| 500+ | $ 0.2683$ 0.2281 | $ 114.05 |
| 1,000+ | $ 0.2538$ 0.2158 | $ 215.80 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 195pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 195pF | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Anwendungen
KI-Übersetzung
- Laptop CPU core
- High-end switching
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRF7831TRPBF-VB | VBsemi Elec | SO-8 | 209 | $0.5263 $0.554 | ||
| AP92U03GM-HF-VB | VBsemi Elec | SO-8 | 47 | $0.4063 $0.4779 | ||
| SI4404DY-T1-E3-VB | VBsemi Elec | SO-8 | 200 | $0.4063 $0.4779 | ||
| SI4866DY-T1-E3-VB | VBsemi Elec | SO-8 | 66 | $0.4036 $0.4748 | ||
| SI4466DY-T1-VB | VBsemi Elec | SO-8 | 20 | $0.5310 $0.5589 | ||
| IRF8736TR-VB | VBsemi Elec | SO-8 | 16 | $0.5390 $0.5673 | ||
| SI4114DY-T1-E3-VB | VBsemi Elec | SO-8 | 50 | $0.4468 $0.5256 | ||
| IRF8113TRPBF-VB | VBsemi Elec | SO-8 | 10 | $0.5535 $0.5826 | ||
| TPC8018-H-VB | VBsemi Elec | SO-8 | 0 | $0.6390 $0.6726 | ||
| HAT2064RJ-VB | VBsemi Elec | SO-8 | 0 | $0.6129 $0.6451 |