VBsemi Elec CSD18533KCS-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | CSD18533KCS-VB |
| LCSC Part # | C2680845 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 120A TO-220AB |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
In-Stock: 38
38 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.3848$ 1.1771 | $ 1.18 |
| 10+ | $ 1.1781$ 1.0014 | $ 10.01 |
| 50+ | $ 0.9552$ 0.8120 | $ 40.60 |
| 100+ | $ 0.8527$ 0.7248 | $ 72.48 |
| 500+ | $ 0.7925$ 0.6737 | $ 336.85 |
| 1,000+ | $ 0.7599$ 0.6460 | $ 646.00 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
C2680845 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



