TI SN74CB3Q16245DGGR

The SN74CB3Q16245 is a high-bandwidth FET bus switch that uses a charge pump to boost the gate voltage of the transmission transistors, providing a low and flat on-resistance (ron). The low and flat on-resistance minimizes propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

Designed to support high-bandwidth applications, the SN74CB3Q16245 offers an optimized interface solution that is well-suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16245 is organized as two 8-bit bus switches with separate output enable (1OE, 2OE) inputs. It can be used as two 8-bit bus switches or as a single 16-bit bus switch. When OE is low, the associated 8-bit bus switch is in the on state, connecting Port A to Port B and allowing bidirectional data flow between the ports. When OE is high, the associated 8-bit bus switch is in the off state, with a high-impedance state between Ports A and B.

The device is fully specified for partial-power-down applications using IOFF. The IOFF circuitry prevents damaging current backflow when the device is powered down. The device has isolation features during power-down. To ensure a high-impedance state during power-up or power-down, OE should be connected to VCC through a pull-up resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

• PCI interface
• Differential signal interface
• Memory interleaving
• Bus isolation
• Low-distortion signal gating