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onsemi CNY173SR2M
| Manufacturer | |
| MPN | CNY173SR2M |
| LCSC Part # | C258247 |
| Packaging | SMD-6P |
| Customer # | |
| Key Attributes | Optocouplers |
| Datasheet |  onsemi CNY173SR2M |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 200%;100% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 200%;100% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Features
AI Translation
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls
In-Stock: 4,780
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4755 | $ 0.48 |
| 10+ | $ 0.3702 | $ 3.70 |
| 30+ | $ 0.3255 | $ 9.77 |
| 100+ | $ 0.2681 | $ 26.81 |
| 500+ | $ 0.2442 | $ 122.10 |
| 1,000+ | $ 0.2282 | $ 228.20 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 200%;100% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 200%;100% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | - | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Features
AI Translation
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls
C258247 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |