onsemi FDS9431A
| Manufacturer | |
| MPN | FDS9431A |
| LCSC Part # | C236911 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 3.5A SO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 8.5nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 8.5nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.
Features
AI Translation
- -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V
- RDS(ON) = 0.180 Ω @ VGS = -2.5 V
- Fast switching speed.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability.
Applications
AI Translation
- DC/DC converter
- Power management
- Load switch
- Battery protection
In-Stock: 1
1 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1052 | $ 1.11 |
| 10+ | $ 0.9105 | $ 9.11 |
| 30+ | $ 0.8033 | $ 24.10 |
| 100+ | $ 0.6822 | $ 68.22 |
| 500+ | $ 0.6285 | $ 314.25 |
| 1,000+ | $ 0.604 | $ 604.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 8.5nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 8.5nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.
Features
AI Translation
- -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V
- RDS(ON) = 0.180 Ω @ VGS = -2.5 V
- Fast switching speed.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability.
Applications
AI Translation
- DC/DC converter
- Power management
- Load switch
- Battery protection
C236911 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



