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onsemi NIS5112D2R2G product image
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onsemi NIS5112D2R2G

Manufacturer
onsemi
MPN
NIS5112D2R2G
LCSC Part #
C233667
Packaging
SOIC-8
Customer #
Key Attributes
9V~18V SOIC-8 Surge Protection Devices (SPDs) RoHS
Datasheetpdf icononsemi NIS5112D2R2G
RoHS Compliance3 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.2131$ 4.21
10+$ 4.109$ 41.09
30+$ 4.0386$ 121.16
100+$ 3.9682$ 396.82
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/Surge Protection Devices (SPDs)
Manufactureronsemi
PackagingSOIC-8
Number of Lines-
Operating temperature-40℃~+175℃
Trigger Current2.3A
Voltage Rating9V~18V
Reset Voltage-
FeaturesOvercurrent Protection;Short-Circuit Protection;Overvoltage clamping protection;Thermal Protection;Overload protection;Under-voltage lockout
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Introduction

AI Translation

The NIS5112 is an integrated switch utilizing a high side N−channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors instead of expensive, low impedance current shunts. It is designed to operate in 12 V systems and includes a robust thermal protection circuit.

Features

AI Translation
  • Integrated Power Device
  • Power Device Thermally Protected
  • No External Current Shunt Required
  • Enable/Timer Pin
  • Adjustable Slew Rate for Output Voltage
  • 9 V to 18 V Input Range
  • 30 mΩ Typical
  • Internal Charge Pump
  • ESD Ratings: Human Body Model (HBM); 4000 V
  • These are Pb −Free Devices

Applications

AI Translation
  • Hard Drives