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VBsemi Elec SQ2301ES-T1-GE3-VB product image
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VBsemi Elec SQ2301ES-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SQ2301ES-T1-GE3-VB
LCSC Part #
C22388975
Packaging
SOT-23(TO-236)
Customer #
Key Attributes
MOSFET P-CH 20V 4A SOT-23(TO-236)
Datasheetpdf iconVBsemi Elec SQ2301ES-T1-GE3-VB
In-Stock: 100
100 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.068$ 0.0578$ 0.58
100+$ 0.0543$ 0.0462$ 4.62
300+$ 0.0474$ 0.0403$ 12.09
3,000+$ 0.0423$ 0.0360$ 108.00
6,000+$ 0.0382$ 0.0325$ 195.00
9,000+$ 0.0361$ 0.0307$ 276.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSOT-23(TO-236)
Drain to Source Voltage20V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
RDS(on)80mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)155pF
Number1 P-Channel
Input Capacitance(Ciss)835pF
Gate Charge(Qg)10nC@4.5V
TypeP-Channel

Features

AI Translation
  • Halogen-free per IEC 61249-2-21
  • Trench power MOSFET
  • 100% gate resistance (Rg) tested
  • RoHS compliant per directive 2002/95/EC

Applications

AI Translation
  • Load switch
  • Power amplifier (PA) switch
  • DC/DC converter